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Elyutin PV, Krivchenkov VD: Kvantovaya mekhanika (Quantum Mechanics). Moscow: Nauka; 1976. Competing interests The authors declare that they have no competing interests. Authors’ contributions ABS and MYB read and approved the final manuscript.”
“Background Topological insulators (TIs) are characterised by insulating behaviour in the bulk and counter-propagating, spin-momentum-locked electronic surface states that are protected https://www.selleckchem.com/products/riociguat-bay-63-2521.html from backscattering off nonmagnetic impurities by time-reversal symmetry [1–7]. It is an experimental challenge to measure the topological surface states in electrical transport experiments, as defect-induced bulk carriers are the main contribution to the measured conductance [8]. In principle, there are two ways to overcome this problem. First, materials engineering can be employed; this allows for compensation doping or reduction of the intrinsic defects [9–11]. Examples are Bi2Te2Se (BTS) and Bi2Se2Te
(BST) – a combination of the binary TIs Bi2Se3 and Bi2Te3 with tetradymite structure [12]. These ternary compounds have a higher bulk resistivity due to suppression of vacancies and anti-site defects [13]. Accordingly, BST was recently found to have dominant surface transport properties [14]. The second approach is to reduce the crystal volume with respect to the surface area. Nanostructures such as thin films or nanowires have Dichloromethane dehalogenase high surface-to-volume ratios, enhancing the contribution of surface states to the overall conduction [15, 16]. Signatures of surface effects are readily observed in Bi2Se3 nanoribbons, but n-type doping due to Se vacancies is identified as a major obstacle for TI-based devices [16, 17]. Here we report the growth of BST nanowires- a promising combination of optimised materials composition and nanostructures. So far, the high-purity growth of uniform TI nanowires has not been achieved through the vapour-liquid-solid (VLS) method [18, 19].