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CZ and BL synthesized the borazine. YS, CZ, BL, GD, and XX discussed the results, and YS drafted the manuscript. All authors have read and approved the final manuscript.”
“Background Recently, resistive random access memory so-called RRAM has attracted great attention to the researchers owing to its simple metal-insulator-metal (M-I-M) structure, long endurance, low-power consumption, good data retention, and excellent scalability [1–5]. To observe the acceptable resistive switching behavior, some switching materials such as TaO x [6–8], HfO x [9, 10], and AlO x [11–13] show promise for future applications. Further, to obtain high-density and device scaling, different kinds of device structures have been reported [14–16]. Ho et al.  have fabricated a 9-nm half-pitch RRAM device using WO x material. Chen et al.  has fabricated a 10 × 10 nm2 cross-point device using HfO x material. Kim et al.