Optimized Si NCs with separated microstructures are requested to obtain efficient Er3+ luminescence. Conclusions In summary, the effect of microstructure

evolution of Si NCs on the Er-related luminescence has been investigated. The SRO and SROEr films were fabricated by sputtering. The structural and optical properties of the films are readily presented, and the coupling efficiency between Si NCs and Er3+ ions is studied. We found that while energy transfer process is more effective for coalescent Si NCs with larger sizes, the Er3+ luminescence efficiency is reduced by the spoiled microstructures of the sensitizer and the limited nonphonon recombination probability in large Si NCs. These results suggest that click here optimized Si NCs with separated and intact microstructures are requested to obtain efficient Er3+ luminescence. Authors’ information DL received his Ph.D. degree in the State Key Laboratory of Silicon Materials

and Department of Material Science and Engineering from Zhejiang University, Hangzhou, China, in 2002. He is currently an associate professor in the Department of Material Science and Engineering at Zhejiang University. His current research interests include the synthesis PCI32765 of plasmonic microstructure, application of plasmonic microstructure on solar cells, Raman and luminescence, and silicon photonics. LJ, LX, and FW are currently the Ph.D. students in

the State Key Laboratory of Silicon Baf-A1 supplier materials and acetylcholine Department of Materials Science and Engineering, Zhejiang University, Hangzhou, China. Their current research interests include luminescence from erbium-doped silicon-rich oxide matrix, silicon-rich nitride matrix, and dislocations in silicon, silicon nitride-based light-emitting devices, and localized surface plasmon resonance of metal nanostructures. DY received his B.S. degree from Zhejiang University, Hangzhou, China, in 1985, and his Ph.D. degree in Semiconductor Materials from the State Key Laboratory of Silicon Materials in Zhejiang University, Hangzhou, China, in 1991. He has been with the Institute of Metal Materials in Tohoku University, Japan, and worked for Freiberg University, Germany, from 1995 to 1997. He is currently the director of the State Key Laboratory of Silicon Materials. His current research interests include the fabrication of single crystalline silicon materials for ultra-larger-scale integrated circuit and defect engineering, polysilicon materials and compound thin film photo-electric conversion materials for photovoltaic, nano-scale silicon wire/tube and other one-dimensional semiconductor materials, and silicon-based materials for optoelectronics. DQ received his B.S. degree in Department of Electrical Engineering from Xiamen University, Xiamen, China, in 1951.