Then, the substrates were rinsed for several times with deionized water and dried under N2 airflow. Ag films with different thicknesses

(8 ~ 30 nm) were deposited onto the cleaned H-Si substrate by thermal evaporation (Figure 1a). For a thin Ag film, with increasing annealing temperatures, the morphologies of the Ag film transform from continuous flat film to mesh one with nanoholes (Figure 1b), bi-continuous structures, and finally nanoparticles (Figure 1d). Then, SiNW and SiNH arrays could be achieved by immersing the Ag-covered Si substrate into a mixed etchant solution consisting of HF and H2O2, with the catalysis selleck products of either the Ag mesh or the Ag nanoparticles, respectively (Figure 1c,f). Figure 1 Schematic of the SiNW and SiNH array fabrication process. (a) Ag film is fabricated by thermal evaporation on a Si substrate. (b) Ag film with regular holes after relatively low-temperature thermal treatment. (c, d) SiNW arrays achieved after MaCE corresponding to (b). (e) Ag nanoparticles with uniform shape after relatively high-temperature thermal treatment. (f, g) SiNH buy MX69 arrays achieved after MaCE corresponding to (d). Results and discussion find more dewetting process of Ag films Dewetting process

of thin film on a solid substrate has been well investigated in the past decades [22–25]. Solid films are usually metastable or unstable in the as-deposited state, and they will spontaneously dewet or agglomerate to form islands when heated to certain temperatures at which the mobility of the constituent atoms is sufficiently high. Dewetting occurs at the holes preexisting during the deposition process (as in this case), at film edges, or at newly formed holes, which is overall a hole nucleation Inositol monophosphatase 1 and growth phenomena. Whatever their source is, a process that leads to hole formation in a film is a prerequisite for dewetting where the holes could potentially serve as nucleation sites or as nuclei themselves [23]. The most common

origin for the heterogeneous nucleation is grain boundary grooving which may occur from the free surface of the film and the film/substrate interface. Hole formation would be most likely when the grain boundary grooves grow sufficiently large. The formation and growth of these holes takes an incubation time for dewetting that depends on film thickness. Hole formation can also occur by grain sinking that results from a diffusional flow when a lower tensile grain loses material to a higher tensile one [23]. Whether the initial holes are developed by grain grooving, grain sinking, or just deposition process, the overall dewetting process is determined by the growth of the holes. As the holes grow, the development of rims slows down the rate of edge retraction by reducing the strain energy of the system. At the early stage, small circular holes grow immediately until neighboring holes meet and form common rims of networks, and new holes may still continue to form throughout the dewetting process.