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Zhu H-L, Xu J-J, Zhao M-T, Bai Y-J: G418 in vivo Facile synthesis of boron nitride coating on carbon nanotubes. Mater Chem Phys 2010, 122:129–132.CrossRef 35. Ci L, Song L, Jin C, Jariwala D, Wu D, Li Y, Srivastava A, Wang ZF, Storr K, Balicas L, Liu F, Ajayan PM: Atomic layers PDK4 of hybridized boron nitride and graphene domains. Nat Mater 2010, 9:430–435.CrossRef 36. Yue J, Cheng W, Zhang X, He D, Chen G: Ternary BCN thin films deposited by reactive sputtering. Thin Solid Films 2000, 375:247–250.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions YS, CZ, BL, and XX designed the experiments, and YS carried out most of the experimental work and material characterizations.

CZ and BL synthesized the borazine. YS, CZ, BL, GD, and XX discussed the results, and YS drafted the manuscript. All authors have read and approved the final manuscript.”
“Background Recently, resistive random access memory so-called RRAM has attracted great attention to the researchers owing to its simple metal-insulator-metal (M-I-M) structure, long endurance, low-power consumption, good data retention, and excellent scalability [1–5]. To observe the acceptable resistive switching behavior, some switching materials such as TaO x [6–8], HfO x [9, 10], and AlO x [11–13] show promise for future applications. Further, to obtain high-density and device scaling, different kinds of device structures have been reported [14–16]. Ho et al. [14] have fabricated a 9-nm half-pitch RRAM device using WO x material. Chen et al. [15] has fabricated a 10 × 10 nm2 cross-point device using HfO x material. Kim et al.

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